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Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers

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Author

  • W. Desrat
  • S. Kamara
  • F. Terki
  • S. Charar
  • Janusz Sadowski
  • D. K. Maude

Summary, in English

Antisymmetric magneto-resistance anomalies generated by a reversal of the magnetization are studied in a number of GaMnAs/InGaAs layers with out-of-plane (easy axis) magnetization. The anomalies occur independent of the magnetic field orientation. This shows, that once a magnetic domain with reversed magnetization is nucleated, simply the presence of the domain wall between the longitudinal contacts is sufficient to give rise to the anomaly. Very different shapes for magneto-resistance anomaly can be observed experimentally depending upon the sample. They reflect the various magnetic domain structures present inside the layers during the magnetization reversal process.

Department/s

Publishing year

2009

Language

English

Publication/Series

Semiconductor Science and Technology

Volume

24

Issue

6

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Physical Sciences
  • Natural Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 0268-1242