The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Measured CMOS Switched High-Quality Capacitors in a Reconfigurable Matching Network

På svenska

Author

Summary, in English

Switched capacitors are here investigated for use in reconfigurable matching networks, particularly for DVB-H frequencies. A 0.13 um CMOS circuit is evaluated through both simulations and measurements. Source grounded NMOS transistors are used to switch high quality metal capacitors located above metal layer 8. The quality factor and tuning range depend on frequency, switch voltage, capacitor size, and transistor width. There is a clear trade-off between quality factor and tuning range, and measurements show quality factors above 50, 100, and 150 at tuning ranges of 3.9, 2.4, and 1.6, respectively. A reconfigurable matching network with the switched capacitors has been realized using external inductors and the measured matching domain for the DVB-H frequency band is shown. The total loss of the network is 1.0 dB, a result of the high quality switched capacitors.

Publishing year

2007

Language

English

Pages

858-862

Publication/Series

IEEE Transactions on Circuits and Systems II: Express Briefs

Volume

54

Issue

10

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • matching
  • MEMS
  • CMOS
  • switched capacitor
  • DVB-H

Status

Published

ISBN/ISSN/Other

  • ISSN: 1549-7747