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Resonant tunneling permeable base transistors with high transconductance

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Author

Summary, in English

A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained.

Publishing year

2004

Language

English

Pages

678-680

Publication/Series

IEEE Electron Device Letters

Volume

25

Issue

10

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • resonant tunneling
  • gallium arsenide (GaAs)
  • permeable base transistors
  • transistors
  • tungsten

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106