Phase Segregation in AlInP Shells on GaAs Nanowires

Summary, in English

We have studied morphology and phase segregation of AlInP shells on GaAs nanowires. Photoluminescence measurements on single core-

shell nanowires indicated variations in the shell composition, and phase segregation was confirmed by cross-sectional scanning transmission

electron microscopy on 30 nm thin slices of the wires. It was discovered that Al-rich domains form in the á112ñ directions where two {110}

shell facets meet during growth. We propose that the mechanism behind this phase segregation is a variation in the chemical potential along

the circumference of the nanowire together with a difference in diffusion lengths for the different growth species. From the morphology of the

core and the shell, we conclude that the side facet growth is temperature dependent forming {112} facets at low growth temperature and

{110} facets at high growth temperature

• Author: Niklas Sköld; Jakob Wagner; Gunnel Karlsson; Tania Hernan; Werner Seifert; Mats-Erik Pistol; Lars Samuelson
• Department/s: Solid State Physics; Centre for Analysis and Synthesis
• Publishing year: 2006
• Language: English
• Pages: 2743-2747
• Publication/Series: Nano Letters
• Volume: 6
• Issue: 12
• Links: http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2006/6/i12/pdf/nl061692d.pdf; http://dx.doi.org/10.1021/nl061692d
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology; Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Other: ISSN: 1530-6992