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Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

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Author

  • BS Sorensen
  • PE Lindelof
  • Janusz Sadowski
  • R Mathieu
  • P Svedlindh

Summary, in English

We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.

Department/s

Publishing year

2003

Language

English

Pages

2287-2289

Publication/Series

Applied Physics Letters

Volume

82

Issue

14

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Physical Sciences
  • Natural Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951