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Resonant tunneling permeable base transistor based pulsed oscillator

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Author

Summary, in English

A technology was developed to embed nm-sized metallic features in close vicinity to semiconductor heterostructures, which allows a direct integration of resonant tunneling diodes (RTD) inside the channel of permeable base transistor. A AlGaAs/InGaAs based RTD was grown by molecular beam epitaxy (MBE), with peak current density either 70 or 120 kA/cm<sup>2</sup>. A fundamental oscillation frequency of 800 MHz was detected, with higher harmonics up to 2.6 GHz, using a spectrum analyzer. It was found that the oscillations could be quenched by applying a large (-1.5V) negative gate bias. The results indicate that a three terminal resonant tunneling transistor can be used to obtain pulsed operation of a resonant tunneling based oscillator.

Publishing year

2004

Language

English

Pages

129-130

Publication/Series

Device Research Conference - Conference Digest, DRC

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Peak-current density
  • Gate capacitance
  • Resonant tunneling diodes (RTD)
  • Resonant tunneling permeable based transistor (RT0PBT)

Conference name

Device Research Conference - Conference Digest, 62nd DRC

Conference date

2004-06-21 - 2004-06-23

Conference place

Notre Dame, IN, United States

Status

Published

ISBN/ISSN/Other

  • ISSN: 1548-3770