Substrate orientation: a way towards higher quality monolayer graphene growth on 6H-SiC(0001)

Summary, in English

The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03°) than on those with a larger (0.25°). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene–SiC structures.

• Author: C. Virojanadara; R. Yakimova; J.R. Osiecki; M. Syväjärvi; R.I.G. Uhrberg; L.I. Johansson; Alexei Zakharov
• Department/s: MAX IV Laboratory
• Publishing year: 2009
• Language: English
• Pages: 87-90
• Publication/Series: Surface Science
• Volume: 603
• Issue: 15
• Links: http://dx.doi.org/10.1016/j.susc.2009.05.005
• Document type: Journal article
• Publisher: Elsevier
• Topic: Natural Sciences; Physical Sciences
• Status: Published
• ISBN/ISSN/Other: ISSN: 0039-6028