The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator

På svenska

Author

Summary, in English

We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.

Publishing year

2012

Language

English

Pages

970-972

Publication/Series

IEEE Electron Device Letters

Volume

33

Issue

7

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • generator
  • pulse
  • metal-oxide-semiconductor field-effect transistor (MOSFET)
  • metal-organic chemical vapor deposition regrowth
  • Impulse radio
  • InGaAs
  • resonant tunneling diode (RTD)
  • ultrawideband
  • wavelet

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106