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Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations

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Author

  • M. Ahola-Tuomi
  • M. P. J. Punkkinen
  • P. Laukkanen
  • M. Kuzmin
  • J. Lang
  • Karina Schulte
  • Annette Pietzsch
  • R. E. Perala
  • N. Rasanen
  • I. J. Vayrynen

Summary, in English

We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.

Department/s

Publishing year

2011

Language

English

Publication/Series

Physical Review B (Condensed Matter and Materials Physics)

Volume

83

Issue

24

Document type

Journal article

Publisher

American Physical Society

Topic

  • Physical Sciences
  • Natural Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1098-0121