Au-free epitaxial growth of InAs nanowires

Summary, in English

III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.

• Author: Bernhard Mandl; Julian Stangl; Thomas Mårtensson; Anders Mikkelsen; Jessica Bolinsson; Lisa Karlsson; Gunther Bauer; Lars Samuelson; Werner Seifert
• Department/s: Solid State Physics; Synchrotron Radiation Research; Centre for Analysis and Synthesis
• Publishing year: 2006
• Language: English
• Pages: 1817-1821
• Publication/Series: Nano Letters
• Volume: 6
• Issue: 8
• Links: http://dx.doi.org/10.1021/nl060452v
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology
• Status: Published
• ISBN/ISSN/Other: ISSN: 1530-6992