Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Summary, in English

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]

• Author: C. Coletti; K. V. Emtsev; Alexei Zakharov; T. Ouisse; D. Chaussende; U. Starke
• Department/s: MAX IV Laboratory
• Publishing year: 2011
• Language: English
• Publication/Series: Applied Physics Letters
• Volume: 99
• Issue: 8
• Links: http://dx.doi.org/10.1063/1.3618674
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Natural Sciences; Physical Sciences
• Status: Published
• ISBN/ISSN/Other: ISSN: 0003-6951