Dynamics of extremely anisotropic etching of InP nanowires by HCl
Author
Summary, in English
We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.
Publishing year
2011
Language
English
Pages
222-224
Publication/Series
Chemical Physics Letters
Volume
502
Issue
4-6
Document type
Journal article
Publisher
Elsevier
Topic
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Other
- ISSN: 0009-2614