A novel frequency-multiplication device based on three-terminal ballistic junction
Author
Summary, in English
In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.
Department/s
Publishing year
2002
Language
English
Pages
377-379
Publication/Series
IEEE Electron Device Letters
Volume
23
Issue
7
Document type
Journal article
Publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
Topic
- Condensed Matter Physics
Keywords
- three-terminal ballistic
- ballistic devices
- frequency-multiplication
- junctions
Status
Published
ISBN/ISSN/Other
- ISSN: 0741-3106