Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

Summary, in English

In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.

• Author: Mikael Egard; Sofia Johansson; Anne-Charlotte Johansson; Karl-Magnus Persson; Anil Dey; Mattias Borg; Claes Thelander; Lars-Erik Wernersson; Erik Lind
• Department/s: Solid State Physics; Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
• Publishing year: 2010
• Language: English
• Pages: 809-812
• Publication/Series: Nano Letters
• Volume: 10
• Issue: 3
• Links: http://www.ncbi.nlm.nih.gov/pubmed/20131812?dopt=Abstract; http://dx.doi.org/10.1021/nl903125m
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology
• Status: Published
• Research group: Nano; Digital ASIC; Analog RF; Broadband Communication
• ISBN/ISSN/Other: ISSN: 1530-6992