The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

InAs nanowire metal-oxide-semiconductor capacitors

På svenska

Author

Summary, in English

We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.

Publishing year

2008

Language

English

Publication/Series

Applied Physics Letters

Volume

92

Issue

25

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Status

Published

Research group

  • Linne Center for Nanoscience and Quantum Engineering
  • Nano

ISBN/ISSN/Other

  • ISSN: 0003-6951