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Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

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Author

Summary, in English

We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgap InSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3633742]

Publishing year

2011

Language

English

Publication/Series

Journal of Applied Physics

Volume

110

Issue

6

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0021-8979