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Dissociative NH3 adsorption on the Si(100)2 × 1 surface at 300 K

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Author

Summary, in English

High resolution electron energy loss spectroscopy has been used to determine how NH3 adsorbs on the Si(100)2 × 1 surface at 300 K. We find that the NH3 molecules dissociate into NH2 and H on adsorption. Combination bands, overtones and double losses for the Si---NH2 group are observed. An anneal to 800 K is sufficient to dissociate the adsorbed NH2 groups while the majority of the Si---H bonds remain intact. An anneal to 1100 K is enough to break the Si-H bonds and start the formation of silicon nitride.

Publishing year

1991

Language

English

Pages

353-356

Publication/Series

Surface Science

Volume

241

Issue

3

Document type

Journal article

Publisher

Elsevier

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

Research group

  • Electromagnetic theory

ISBN/ISSN/Other

  • ISSN: 0039-6028