A Class-AB 1.65GHz-2GHz Broadband CMOS Medium Power Amplifier

Summary, in English

In this paper a single stage broadband CMOS RF power

amplifier is presented. The power amplifier is fabricated in

a 0:25¹m CMOS process. Measurements with a 2:5V supply

voltage show an output power of 18:5 dBm with an associated

PAE of 16% at the 1-dB compression point. The measured

gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated

and measured results agree reasonably well.

• Author: H Aniktar; Henrik Sjöland; J H, Mikkelsen; T Larsen
• Department/s: Department of Electrical and Information Technology
• Publishing year: 2005
• Language: English
• Publication/Series: Proceedings of Norchip 2005
• Links: http://ieeexplore.ieee.org/iel5/10643/33584/01597041.pdf?isnumber=33584&arnumber=1597041
• Document type: Conference paper
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Conference name: NORCHIP Conference, 2005
• Conference date: 2005-11-21 - 2005-11-22
• Conference place: Oulu, Finland
• Status: Published