The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Decay of core excitations in bulk h-BN studied with resonant Auger spectroscopy

Author

Summary, in English

Non-radiative decay of core excitations at the B 1s and N 1s absorption edges of bulk hexagonal boron nitride (h-BN) has been studied with resonant Auger spectroscopy. In order to reproduce the bulk properties of the sample while keeping it electrically conducting, we have grown reasonably thick (more than 20nm) polycrystalline films of h-BN on a Ni(111) surface by thermal cracking of borazine vapor. The probability of the participator Auger process in the non-radiative decay of the B 1s(-1) pi* and N 1s(-1) pi* excitations has been found to be very high (31%) and rather low (below 0.5%), respectively. The drastic difference between the participator Auger decay probabilities of these two excitations has been explained in terms of different localization of the electrons promoted into the lowest unoccupied pi* state on the cationic (B) and anionic (N) sites.

Department/s

Publishing year

2005

Language

English

Pages

59-64

Publication/Series

Journal of Electron Spectroscopy and Related Phenomena

Volume

148

Issue

1

Document type

Journal article

Publisher

Elsevier

Topic

  • Physical Sciences
  • Natural Sciences

Keywords

  • resonant Auger
  • photoelectron spectroscopy
  • boron nitride
  • NEXAFS
  • spectroscopy

Status

Published

ISBN/ISSN/Other

  • ISSN: 0368-2048