Design of resonant tunneling permeable base transistors

Summary, in English

We evaluate the performance of resonant tunneling permeable base transistors (RT-PBTs) by numerical simulations. Since the current is limited by the barriers, a design with a low doping level around the embedded gate wires is chosen to improve the transconductance. We evaluate the influence of the various geometrical parameters, to optimize the design for high frequency operation. We obtain a performance comparable to conventional PBTs, to which we have incorporated the tunneling characteristics

• Author: Peter Lindström; Erik Lind; Lars-Erik Wernersson
• Department/s: Solid State Physics; Department of Electrical and Information Technology
• Publishing year: 2004
• Language: English
• Pages: 158-163
• Publication/Series: 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
• Links: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1354448
• Document type: Conference paper
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Condensed Matter Physics; Electrical Engineering, Electronic Engineering, Information Engineering
• Keywords: geometrical parameters; transconductance; gate wires; doping level; permeable base transistors; resonant tunneling; high frequency operation; tunneling characteristics
• Conference name: 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings
• Conference date: 2003-08-25 - 2003-08-27
• Conference place: San Diego, CA, United States
• Status: Published
• ISBN/ISSN/Other: ISBN: 0-7803-8614-0