High Frequency Performance of Vertical InAs Nanowire MOSFET

Summary, in English

We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-kappa gate oxide. The transistors show f(t)=5.6 GHz and f(max)=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-pi model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.

• Author: Erik Lind; Mikael Egard; Sofia Johansson; Anne-Charlotte Johansson; Mattias Borg; Claes Thelander; Karl-Magnus Persson; Anil Dey; Lars-Erik Wernersson
• Department/s: Department of Electrical and Information Technology; Solid State Physics
• Publishing year: 2010
• Language: English
• Publication/Series: 2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm)
• Links: http://dx.doi.org/10.1109/ICIPRM.2010.5516010
• Document type: Conference paper
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Condensed Matter Physics; Electrical Engineering, Electronic Engineering, Information Engineering
• Conference name: 22nd International Conference on Indium Phosphide and Related Materials
• Conference date: 2010-05-31 - 2010-06-04
• Status: Published
• Research group: Analog RF; Digital ASIC; Nano
• ISBN/ISSN/Other: ISSN: 1092-8669; ISBN: 978-1-4244-5919-3