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Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

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Author

  • D. Usachov
  • V. K. Adamchuk
  • D. Haberer
  • A. Grueneis
  • H. Sachdev
  • Alexei Preobrajenski
  • C. Laubschat
  • D. V. Vyalikh

Summary, in English

We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.

Department/s

Publishing year

2010

Language

English

Publication/Series

Physical Review B (Condensed Matter and Materials Physics)

Volume

82

Issue

7

Document type

Journal article

Publisher

American Physical Society

Topic

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1098-0121