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InP hot electron transistors with a buried metal gate

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Author

Summary, in English

To apply the ballistic nature of hot electrons, an InP hot electron transistor with a buried metal (BM-HET) is reported. In this device, carriers are extracted from the emitter by an attractive potential originating from an embedded metal grating, and they propagate through intrinsic semiconductor material only. A simple estimation shows a high cutoff frequency and low output conductance. The estimated highest cutoff frequency is approximately 1 THz. Fabricated devices show that the collector current increased with the gate bias. After extraction of the leakage cur-rent, a clear saturation of the collector current in common-emitter characteristics was confirmed and the possibility of BM-HET as a candidate for high-speed electron devices was demonstrated.

Publishing year

2003

Language

English

Pages

7221-7226

Publication/Series

Japanese Journal of Applied Physics

Volume

42

Issue

12

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • hot electron transistors
  • buried metal gate
  • ballistic electron
  • InP

Status

Published

ISBN/ISSN/Other

  • ISSN: 0021-4922