Scanning photoelectron microscopy study of as-grown and heat-treated chemical vapor deposition boron-doped diamond films
Author
Summary, in English
The electronic structure of as-grown and high temperature (1625 C) annealed chemical vapour deposition boron-doped (1-4 ppm) diamond films has been studied using a scanning photoelectron microscope with lateral resolution in the 1 mum range. The fresh surfaces have been obtained by cleaving free-standing films in situ at a pressure of 7 X 10(-11) Torr. The major part of the contrast in photoelectron images is due to topography effect but grain structure (grain size 10-50 mum) can be also detected. The detailed study of separate grains shows that as-grown films demonstrate significant intensity in the vicinity of the Fermi level with a characteristic band tail which is believed to result from static and dynamic site disorder. In annealed films a sharp drop in Fermi level intensity is observed and samples show charging effects in scanning electron microscope measurements. As-grown films contain different types of defects which appear as electrically active trapping centers and give rise to the increased density of states at the Fermi level. The evolution of the defect structure and possible boron redistribution upon annealing explains the much lower photoemission signal around the Fermi level in heat-treated films.
Department/s
Publishing year
2002
Language
English
Pages
2509-2513
Publication/Series
Journal of Vacuum Science and Technology B
Volume
20
Issue
6
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Natural Sciences
- Atom and Molecular Physics and Optics
- Physical Sciences
Status
Published
ISBN/ISSN/Other
- ISSN: 1520-8567