Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

Summary, in English

The influence of InAs orientations and high-k oxide deposition conditions on the electrical and

structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated

using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results

suggest that the interface traps around the conduction band edge are correlated to the As-oxide

amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide

determines the border trap density, hence the capacitance frequency dispersion. The comparison of

different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B

substrates followed by an annealing procedure at 400 oC.

• Author: Jun Wu; Erik Lind; Rainer Timm; Martin Hjort; Anders Mikkelsen; Lars-Erik Wernersson
• Department/s: Department of Electrical and Information Technology; Synchrotron Radiation Research
• Publishing year: 2012
• Language: English
• Pages: 3-132905
• Publication/Series: Applied Physics Letters
• Volume: 100
• Issue: 13
• Full text: - 1 MB; Download statistics
• Links: http://link.aip.org/link/?APL/100/132905; http://dx.doi.org/10.1063/1.3698094
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Atom and Molecular Physics and Optics; Electrical Engineering, Electronic Engineering, Information Engineering
• Keywords: Interface; InAs; High k; MOS capacitors
• Status: Published
• Research group: Nano; Synch Rad Res
• ISBN/ISSN/Other: ISSN: 0003-6951