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Electron mean free path for GaAs(100)-c(4x4) at very low energies

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Author

  • P Jiricek
  • M Cukr
  • I Bartos
  • Janusz Sadowski

Summary, in English

Electron mean free path (MFP) was determined by the angular resolved photoemission in 10-40 eV energy range for GaAs(100)-c(4 x 4) by the overlayer method. The investigation was based on the attenuation of the normal photoemission intensity of the Al 2p line from the molecular-beam-epitaxy grown GaAlAs layer buried four monolayers of GaAs below the surface. The energy dependence of the MFP shows a pronounced maximum at about 30 eV which is related to the corresponding section of the electron band structure of GaAs(100). (C) 2004 Elsevier B.V. All rights reserved.

Department/s

Publishing year

2004

Language

English

Pages

1196-1199

Publication/Series

Proceedings of the 22nd European Conference on Surface Science (Surface Science)

Volume

566

Document type

Conference paper

Publisher

Elsevier

Topic

  • Physical Sciences
  • Natural Sciences

Keywords

  • electron solid interactions
  • spectroscopy
  • synchrotron radiation photoelectron
  • molecular beam epitaxy
  • gallium arsenide

Conference name

22nd European Conference on Surface Science

Conference date

2003-09-07 - 2003-09-12

Conference place

Prague, Czech Republic

Status

Published

ISBN/ISSN/Other

  • ISSN: 0039-6028