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Electrical properties of InAs-based nanowires

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Author

Summary, in English

Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy from size-selected gold nanoparticles acting as catalysts. By changing materials during the growth it is possible to form heterostructures both along the length of the nanowires but also in a core-shell fashion. In particular, incorporation of pairs of InP tunnel barriers in InAs nanowires has been used to fabricate single-electron transistors and resonant tunneling diodes

Publishing year

2004

Language

English

Pages

449-452

Publication/Series

AIP Conference Proceedings

Volume

723

Document type

Conference paper

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Keywords

  • InAs-InP
  • Au
  • resonant tunneling diodes
  • catalysts
  • heterostructures
  • semiconductor nanowires
  • electrical properties
  • chemical beam epitaxy
  • gold nanoparticles
  • metal organic vapor phase epitaxy
  • single electron transistors
  • InP tunnel barriers

Conference name

Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials

Conference date

2004-03-06 - 2004-03-13

Conference place

Tirol, Austria

Status

Published

ISBN/ISSN/Other

  • ISSN: 1551-7616
  • ISSN: 0094-243X
  • CODEN: APCPCS