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In-Plane Magnetic Anisotropy and Temperature Dependence of Switching Field in (Ga, Mn)As Ferromagnetic Semiconductors

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Author

  • S. Kamara
  • F. Terki
  • S. Charar
  • M. Dehbaoui
  • Janusz Sadowski
  • R. -M. Galera

Summary, in English

We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H

is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two

regions of temperature. At T <TC/2, the “square-shape” signal and at T >TC/2 the “zigzag-shape” signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization

reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.

Department/s

Publishing year

2012

Language

English

Pages

4868-4873

Publication/Series

Journal of Nanoscience and Nanotechnology

Volume

12

Issue

6

Document type

Journal article

Publisher

American Scientific Publishers

Topic

  • Nano Technology

Keywords

  • ferromagnetic semiconductors
  • spintronics
  • Planar Hall effect

Status

Published

ISBN/ISSN/Other

  • ISSN: 1533-4880