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Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates

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Author

Summary, in English

Thin InAs layers and membranes are fabricated on GaAs substrates using GaSb buffer layers grown by MOVPE. The quality of the GaSb buffer layers is optimized and epitaxial InAs layers are grown on GaSb layers of various thickness. The best GaSb buffer layers are obtained for a nucleation temperature of 450 degrees C and a subsequent growth temperature of 570 degrees C with a V/III ratio of 3, as confirmed by both the structural (high-resolution XRD, AFM) and electrical (Hall) measurements. Furthermore, a clear relationship between the structural quality of the GaSb and InAs layers is established. Finally, free-standing InAs structures are fabricated where Hall measurements reveal a mobility that depends on the film thickness.

Publishing year

2012

Language

English

Publication/Series

Journal of Vacuum Science and Technology B

Volume

30

Issue

5

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • atomic force microscopy
  • buffer layers
  • Hall effect
  • III-V
  • semiconductors
  • indium compounds
  • MOCVD
  • nucleation
  • semiconductor
  • epitaxial layers
  • semiconductor growth
  • vapour phase epitaxial growth
  • X-ray diffraction

Status

Published

ISBN/ISSN/Other

  • ISSN: 1520-8567