InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure

Summary, in English

Heteroepitaxial growth of InAs was investigated on sidewalls of InP nanowires (NWs) using metal-organic vapor phase epitaxy. InAs quantum wells (QWs) with smooth surface were formed on the InP NWs having perfect wurtzite phase structure. On the other hand, InAs quantum dots (QDs) were formed on wurtzite InP NWs purposely introduced with stacking-fault segments. Photoluminescence from single NWs attributed to both QWs and QDs was observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646386]

• Author: Kenichi Kawaguchi; Magnus Heurlin; David Lindgren; Magnus Borgström; Martin Ek; Lars Samuelson
• Department/s: Solid State Physics; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
• Publishing year: 2011
• Language: English
• Publication/Series: Applied Physics Letters
• Volume: 99
• Issue: 13
• Links: http://dx.doi.org/10.1063/1.3646386
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Condensed Matter Physics; Chemical Sciences
• Keywords: III-V semiconductors; indium compounds; MOCVD; photoluminescence; semiconductor growth; semiconductor quantum dots; semiconductor quantum; wells; stacking faults; vapour phase epitaxial growth
• Status: Published
• ISBN/ISSN/Other: ISSN: 0003-6951