High Transconductance Self-Aligned Gate-Last Surface Channel In_0.53Ga_0.47As MOSFET

Summary, in English

In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.

• Author: Mikael Egard; Lars Ohlsson; Mattias Borg; Filip Lenrick; Reine Wallenberg; Lars-Erik Wernersson; Erik Lind
• Department/s: Solid State Physics; Department of Electrical and Information Technology; Centre for Analysis and Synthesis; NanoLund: Centre for Nanoscience
• Publishing year: 2011
• Language: English
• Publication/Series: 2011 IEEE International Electron Devices Meeting (IEDM)
• Document type: Conference paper
• Publisher: IEEE Press
• Topic: Condensed Matter Physics; Electrical Engineering, Electronic Engineering, Information Engineering
• Conference name: IEEE International Electron Devices Meeting (IEDM)
• Conference date: 2011-12-05 - 2011-12-07
• Status: Published
• ISBN/ISSN/Other: ISBN: 978-1-4577-0505-2