A 1.6-2.6GHz 29dBm Injection-Locked Power Amplifier with 64% peak PAE in 65nm CMOS
Author
Summary, in English
This paper presents a wideband CMOS power
amplifier intended for cellular handset applications. The circuit
exploits injection locking to achieve a power gain of 20.5dB from
a single stage amplifier. The maximum output power of 29dBm,
with a peak drain- and power-added-efficiency (PAE) of 66%
and 64%, respectively, occurs at a center frequency of 2GHz
with a 3V supply. A cross-coupled cascode topology enables a
wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output
power levels below 4dBm the circuit operates as a linear class
AB amplifier with a power consumption of 17mW from a 0.48V
supply. The power gain of 20.5dB is kept constant for all output
powers; with an AM-AM- and AM-PM-conversion of 0.2dB and
17deg, respectively, over the entire WCDMA dynamic range of
80dB. The circuit is implemented in a standard 65nm CMOS
process with a total chip area of 0.52x0.48mm2 including pads.
amplifier intended for cellular handset applications. The circuit
exploits injection locking to achieve a power gain of 20.5dB from
a single stage amplifier. The maximum output power of 29dBm,
with a peak drain- and power-added-efficiency (PAE) of 66%
and 64%, respectively, occurs at a center frequency of 2GHz
with a 3V supply. A cross-coupled cascode topology enables a
wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output
power levels below 4dBm the circuit operates as a linear class
AB amplifier with a power consumption of 17mW from a 0.48V
supply. The power gain of 20.5dB is kept constant for all output
powers; with an AM-AM- and AM-PM-conversion of 0.2dB and
17deg, respectively, over the entire WCDMA dynamic range of
80dB. The circuit is implemented in a standard 65nm CMOS
process with a total chip area of 0.52x0.48mm2 including pads.
Department/s
Publishing year
2011
Language
English
Pages
299-302
Publication/Series
Proc. IEEE European Solid State Circuits Conference
Document type
Conference paper
Publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
Keywords
- Power efficiency
- Poweramplifier
- Injection lock
- CMOS
- Hybrid EER
Conference name
IEEE European Solid State Circuits Conference, ESSCIRC 2011
Conference date
2011-09-12 - 2011-09-16
Conference place
Helsinki, Finland
Status
Published
Research group
- Elektronikkonstruktion
- Analog RF
ISBN/ISSN/Other
- ISSN: 1930-8833