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Giant anisotropic magnetoresistance in insulating ultrathin (Ga,Mn)As

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Author

  • R. R. Gareev
  • A. Petukhov
  • M. Schlapps
  • Janusz Sadowski
  • W. Wegscheider

Summary, in English

Molecular-beam epitaxy grown, 5 nm thick annealed Ga0.95Mn0.05As films demonstrate transition from metallic to insulating state for sheet resistances near resistance quantum, which we connect with the two-dimensional hole localization. Below the metal-insulator transition we found the giant anisotropic magnetoresistance (GAMR) effect, which depends on the orientation of magnetization to crystallographic axes and demonstrates the twofold symmetry angular dependence. The GAMR manifests itself in positive magnetoresistance near 50% at T=1.7 K for H//[110] crystallographic direction in contrast to smaller negative magnetoresistance for H//[110] direction. We connect the GAMR with formation of high- and low-resistance states with different localization due to anisotropic spin-orbit interaction.

Department/s

Publishing year

2010

Language

English

Publication/Series

Applied Physics Letters

Volume

96

Issue

5

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Physical Sciences
  • Natural Sciences

Keywords

  • metal-insulator transition
  • compounds
  • manganese
  • magnetisation
  • magnetic anisotropy
  • magnetoresistance
  • giant
  • gallium arsenide
  • crystal orientation
  • electric resistance
  • molecular beam epitaxial growth
  • semimagnetic semiconductors
  • spin-orbit interactions

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951