Transient studies on InAs/HfO2 nanowire capacitors
Author
Summary, in English
Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 mu s are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7 x 10(-17) cm(-2). The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533379]
Department/s
Publishing year
2011
Language
English
Publication/Series
Applied Physics Letters
Volume
98
Issue
1
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Status
Published
Research group
- Nano
ISBN/ISSN/Other
- ISSN: 0003-6951