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Dual-gate induced InP nanowire diode

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Author

Summary, in English

Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.

Publishing year

2011

Language

English

Pages

279-280

Publication/Series

Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors

Volume

1399

Document type

Conference paper

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Keywords

  • Fermi level tuning
  • InP
  • wrap-gate
  • nanowire

Conference name

30th International Conference on the Physics of Semiconductors (ICPS-30)

Conference date

2010-07-25 - 2010-07-30

Conference place

Seoul, Korea, Republic of

Status

Published

Research group

  • Nanometer structure consortium (nmC)

ISBN/ISSN/Other

  • ISSN: 1551-7616
  • ISSN: 0094-243X