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Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces

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Author

Summary, in English

A resonant tunneling permeable base transistor has been realized experimentally by overgrowing a tungsten grating placed in direct vicinity to a double barrier heterostructure. In this way, we can directly modulate the tunneling current via an embedded gate. Since the quality of the overgrown interface is critical, special attention is paid to this issue, and the effect of different wet etchants prior to overgrowth is studied both by electrical measurements and by the use of an atomic force microscope. A clear dependence of the electrical properties and the crystal quality on the etchants used is found. This is a key result for the realization of our resonant tunneling device.

Publishing year

2002

Language

English

Pages

1066-1069

Publication/Series

IEEE Transactions on Electron Devices

Volume

49

Issue

6

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • resonant tunneling
  • field-effect transistors
  • gallium arsenide
  • transistors
  • surface cleaning
  • tungsten

Status

Published

ISBN/ISSN/Other

  • ISSN: 0018-9383