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Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study

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Author

Summary, in English

We have investigated the Au-catalyzed GaAs <111 > B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads to significant tapering of the whiskers. For low temperatures, the growth rate R in the In R = f (1/T)-plot results in an Arrhenius activation energy of about 67-75 kJ/mol, a value which is in agreement with activation energies reported for low-temperature planar growth of GaAs from TMG and AsH3. The Au acts as a local catalyst and as a collector of reactants, enabling a liquid-phase-epitaxy-like growth with high growth rates at the GaAs (111)B/(Au,Ga) interface.

Publishing year

2004

Language

English

Pages

18-22

Publication/Series

Journal of Crystal Growth

Volume

260

Issue

1-2

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • materials
  • semiconducting III-V
  • nanostructures
  • metalorganic vapor phase epitaxy

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-0248