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Deposition of HfO2 on InAs by atomic-layer deposition

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Author

Summary, in English

Metal-oxide-semiconductor (MOS) capacitors are formed on bulk InAs substrates by atomic-layer deposition (ALD) of HfO2. Prior to film growth, InAs substrates receive a wet-chemical treatment of HCl, buffered HF (BHF), or (NH4)(2)S. Hafnium dioxide films are grown using 75 ALD cycles with substrate temperatures of 100, 200, and 300 degrees C. Substrate temperature is found to have a significant influence on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the capacitors, while the influence of substrate pretreatment manifests itself in interface trap density, D-it, as measured by the Terman method. (C) 2009 Elsevier B.V. All rights reserved.

Publishing year

2009

Language

English

Pages

1561-1563

Publication/Series

Microelectronic Engineering

Volume

86

Issue

7-9

Document type

Conference paper

Publisher

Elsevier

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Atomic-layer deposition
  • III-V Metal-oxide-semiconductor
  • Hafnium dioxide
  • Indium arsenide

Conference name

16th Biennial Conference on Insulating Films on Semiconductors

Conference date

2009-06-28 - 2009-07-07

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0167-9317
  • ISSN: 1873-5568