Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces

Summary, in English

First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2 x 1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2 x 1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.

• Author: P Laukkanen; M P J Punkkinen; H-P Komsa; M Ahola-Tuomi; K Kokko; M Kuzmin; Johan Adell; Janusz Sadowski; R E Perala; M Ropo; T T Rantala; I J Vayrynen; M Pessa; L Vitos; J Kollar; S Mirbt; B Johansson
• Department/s: MAX IV Laboratory
• Publishing year: 2008
• Language: English
• Publication/Series: Physical Review Letters
• Volume: 100
• Issue: 8
• Links: http://dx.doi.org/10.1103/PhysRevLett.100.086101
• Document type: Journal article
• Publisher: American Physical Society
• Topic: Physical Sciences; Natural Sciences
• Status: Published
• ISBN/ISSN/Other: ISSN: 1079-7114