Quantum-dot-induced ordering in GaxIn1-xP/InP islands

Summary, in English

Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and low-temperature scanning tunneling luminescence (STL). STM reveals that the overgrowth is highly uneven, in which elongated GaxIn1-xP islands covering the dots are formed. TEM and high-spatial-resolution STL show that the quantum dots locally induce domains with higher degree of ordering in the islands. The luminescence from these domains is observed as a strong GaxIn1-xP peak at an energy below the emission from the GaxIn1-xP barrier material.

• Author: Ulf Håkanson; T Sass; Mikael Johansson; Mats-Erik Pistol; Lars Samuelson
• Department/s: Solid State Physics
• Publishing year: 2002
• Language: English
• Publication/Series: Physical Review B (Condensed Matter and Materials Physics)
• Volume: 66
• Issue: 23
• Links: http://dx.doi.org/10.1103/PhysRevB.66.235308
• Document type: Journal article
• Publisher: American Physical Society
• Topic: Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Other: ISSN: 1098-0121