The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

På svenska

Author

Summary, in English

We have developed laterally asymmetric In0.53Ga0.47As/InP MOSFETs with different regrown contacts at the source (In0.53Ga0.47As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain g(m)/g(d) has been obtained with a reduced output conductance g(d) and improved breakdown voltage V-bd. For L-g = 50 nm, a high oscillation frequency f(max) = 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.

Publishing year

2014

Language

English

Pages

515-517

Publication/Series

IEEE Electron Device Letters

Volume

35

Issue

5

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • InGaAs MOSFET
  • source/drain engineering
  • voltage gain
  • oscillation
  • frequency

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106