MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures

Summary, in English

We demonstrate MOVPE-growth of InAs/AlAs0.16Sb0.84/GaSb and InAs/AlAs0.16Sb0.84/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at half maximum routinely below 100 arcsec. Key points regarding interface control for heteroepitaxial nucleation are reviewed and the choice of suitable precursors to minimize the incorporation of C and O are discussed.

• Author: Peter Ramvall; C.H. Wang; Gvidas Astromskas; Georgios Vellianitis; Martin Holland; Ravi Droopad; Lars Samuelson; Lars-Erik Wernersson; Matthias Paslack; C.H. Diaz
• Department/s: Solid State Physics; NanoLund: Centre for Nanoscience
• Publishing year: 2013
• Language: English
• Pages: 43-48
• Publication/Series: Journal of Crystal Growth
• Volume: 374
• Full text: - 1 MB; Download statistics
• Links: http://www.sciencedirect.com/science/article/pii/S0022024813002339; http://dx.doi.org/10.1016/j.jcrysgro.2013.03.044
• Document type: Journal article
• Publisher: Elsevier
• Topic: Condensed Matter Physics
• Keywords: A1. Crystal structure; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; B1. Nanomaterials; B1. Antimonides; B3. Heterojunction semiconductor devices.
• Status: Published
• ISBN/ISSN/Other: ISSN: 0022-0248