Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Summary, in English

This paper presents DC and RF characterization as

well as modeling of vertical InAs nanowire MOSFETs with LG =

200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS =

0.5 V show that high transconductance (gm = 1.37 mS/μm), high

drive current (IDS = 1.34 mA/μm), and low on-resistance (RON =

287 Ωμm) can be realized using vertical InAs nanowires on Si

substrates. By measuring the 1/f-noise, the gate area normalized

gate voltage noise spectral density, SVG·LG·WG, is determined to

be lowered one order of magnitude compared to similar devices

with a high-κ film consisting of HfO2 only. Additionally, with a

virtual source model we are able to determine the intrinsic

transport properties. These devices (LG = 200 nm) show a high

injection velocity (vinj = 1.7·107 cm/s) with a performance

degradation for array FETs predominantly due to an increase in

series resistance.

• Author: Karl-Magnus Persson; Martin Berg; Mattias Borg; Jun Wu; Sofia Johansson; Johannes Svensson; Kristofer Jansson; Erik Lind; Lars-Erik Wernersson
• Department/s: Department of Electrical and Information Technology; Solid State Physics
• Publishing year: 2013
• Language: English
• Pages: 2761-2767
• Publication/Series: IEEE Transactions on Electron Devices
• Volume: 60
• Issue: 9
• Full text: - 2 MB; Download statistics
• Links: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6563112; http://dx.doi.org/10.1109/TED.2013.2272324
• Document type: Journal article
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering; Condensed Matter Physics
• Keywords: MOSFET; RF; InAs; Nanowire (NW)
• Status: Published
• Project: EIT_WWW Wireless with Wires
• Research group: Nano
• ISBN/ISSN/Other: ISSN: 0018-9383