Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors

Summary, in English

By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density. (C) 2013 AIP Publishing LLC.

• Author: Karl-Magnus Persson; B. G. Malm; Lars-Erik Wernersson
• Department/s: Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
• Publishing year: 2013
• Language: English
• Publication/Series: Applied Physics Letters
• Volume: 103
• Issue: 3
• Full text: - 1 MB; Download statistics
• Links: http://ieeexplore.ieee.org/Xplore/defdeny.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D6560855%26userType%3Dinst&denyReason=-133&arnumber=6560855&productsMatched=null&userType=inst; http://dx.doi.org/10.1063/1.4813850
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Keywords: Nanowire; Noise; mobility fluctuations; number fluctutations; InAs; Transistor; MOSFET; FET; high-k; hf02; al203
• Status: Published
• Project: EIT_WWW Wireless with Wires
• Research group: Nano
• ISBN/ISSN/Other: ISSN: 0003-6951