Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

Summary, in English

Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500 degrees C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga1-xMnxAs/GaAs layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230 degrees C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs

• Author: J. Bak-Misiuk; E. Dynowska; P. Romanowski; A. Misiuk; Janusz Sadowski; W. Caliebe
• Department/s: MAX IV Laboratory
• Publishing year: 2012
• Language: English
• Pages: 903-905
• Publication/Series: Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
• Volume: 121
• Issue: 4
• Links: http://przyrbwn.icm.edu.pl/APP/ABSTR/121/a121-4-209.html
• Document type: Journal article
• Publisher: Institute of Physics, Polish Academy of Sciences
• Topic: Physical Sciences; Natural Sciences
• Status: Published
• ISBN/ISSN/Other: ISSN: 0587-4246