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Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence

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Author

Summary, in English

We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

Publishing year

2013

Language

English

Pages

427-428

Publication/Series

Physics of Semiconductors

Volume

1566

Document type

Conference paper

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics
  • Nano Technology

Keywords

  • nanowire
  • wrap-gate
  • photoluminescence
  • InP
  • ITO

Conference name

31st International Conference on the Physics of Semiconductors (ICPS)

Conference date

2012-07-29 - 2012-08-03

Status

Published

ISBN/ISSN/Other

  • ISSN: 0094-243X
  • ISSN: 1551-7616