Hopping Conduction in Mn Ion-Implanted GaAs Nanowires.
Author
Summary, in English
We report on temperature-dependent charge transport in heavily doped Mn(+)-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.
Publishing year
2012
Language
English
Pages
4838-4842
Publication/Series
Nano Letters
Volume
12
Issue
9
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano Technology
Status
Published
ISBN/ISSN/Other
- ISSN: 1530-6992