Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.

Summary, in English

Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.

• Author: Michael D Thompson; Aiyeshah Alhodaib; Adam P Craig; Alex Robson; Atif Aziz; Anthony Krier; Johannes Svensson; Lars-Erik Wernersson; Ana M Sanchez; Andrew R J Marshall
• Department/s: Department of Electrical and Information Technology
• Publishing year: 2016
• Language: English
• Pages: 182-187
• Publication/Series: Nano Letters
• Volume: 16
• Issue: 1
• Links: http://dx.doi.org/10.1021/acs.nanolett.5b03449
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology
• Status: Published
• ISBN/ISSN/Other: ISSN: 1530-6992