Impact of bismuth incorporation into (Ga,Mn)As thin films on their structural and magnetic properties

Summary, in English

Structural and magnetic properties of thin films of the (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. High-resolution X-ray diffraction has been applied to characterize the structural quality and misfit strain in the films. Ferromagnetic Curie temperature and magnetocrystalline anisotropy of the films have been examined by using SQUID magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the films has been shown to reduce the strain in the films and to enhance their Curie temperature. Significant increase in the magnitude of magneto-transport effects caused by incorporation of a small amount of Bi into the films is interpreted as a result of enhanced spinorbit coupling in the (Ga, Mn)(Bi, As) films. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

• Author: K. Levchenko; T. Andrearczyk; J. Z. Domagala; T. Wosinski; T. Figielski; Janusz Sadowski
• Department/s: MAX IV Laboratory
• Publishing year: 2015
• Language: English
• Pages: 1152-1155
• Publication/Series: Physica Status Solidi C
• Volume: 12
• Issue: 8
• Links: http://dx.doi.org/10.1002/pssc.201400219
• Document type: Conference paper
• Publisher: Wiley-Blackwell
• Topic: Other Materials Engineering; Condensed Matter Physics
• Keywords: Mn)(Bi; As); (Ga; magnetic semiconductors; thin films; magneto-resistance; high-resolution; X-ray diffraction
• Conference name: 17th International Conference on Extended Defects in Semiconductors (EDS)
• Conference date: 2014-09-14 - 2014-09-19
• Conference place: Göttingen, Germany
• Status: Published
• ISBN/ISSN/Other: ISSN: 1862-6351; ISSN: 1610-1642