Detection of spin-states in Mn-oped gallium arsenide films
Author
Summary, in English
We show that isolated magnetic dipoles centred at the position of manganese impurities in a gallium arsenide lattice lead to spin polarized states in the bandgap of the III-V semiconductor. Spectroscopy simulations with a tungsten tip agree well with experimental data; in this case, no difference can be observed for the two magnetic groundstates. But if the signal is read with a magnetic iron tip, it changes by a factor of up to 20, depending on the magnetic orientation of the Mn atom.
Department/s
Publishing year
2007
Language
English
Publication/Series
Nanotechnology
Volume
18
Issue
4
Document type
Journal article
Publisher
IOP Publishing
Topic
- Nano Technology
Status
Published
ISBN/ISSN/Other
- ISSN: 0957-4484